SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC640TFR is a PNP epitaxial silicon transistor housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of -80 V and a continuous collector current (IC) of -1 A. The device supports a peak collector current of -1.5 A and offers a DC current gain (hFE) ranging from 25 to 160 depending on the test condition. Key electrical parameters include a collector-emitter saturation voltage of -0.5 V at IC = -500 mA and IB = -50 mA, and a base-emitter on voltage of -1 V at IC = -500 mA. The maximum power dissipation is 1 W, with a junction temperature rating of 150 °C.
Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor while other sources list onsemi or CDIL. Confirm the suffix 'TFR' corresponds to tape-and-reel packaging if required by assembly equipment. Ensure compliance with RoHS standards and check for specific lot traceability requirements to mitigate counterfeit risks during sourcing.
Select this component when a PNP transistor with 1 A continuous current handling is needed alongside a matching NPN counterpart like the BC639. Consider the TO-92 package constraints for thermal management, noting the 1 W dissipation limit. Evaluate the hFE range suitability for the specific drive current requirements of the target application circuit.
The BC640 belongs to a family of medium-power planar epitaxial transistors designed for general-purpose use. It serves as the PNP complement to the BC639 NPN transistor, facilitating push-pull configurations. Manufactured using silicon planar epitaxial technology, it provides reliable performance in standard through-hole mounting environments typical of consumer and industrial electronics.
BC640BU, BC640TA, BC640TAR, BC640TF, BC639 (as complementary pair)
The maximum collector-emitter voltage (VCEO) is -80 V.
Yes, the datasheet explicitly states that the BC640 is the complement to the BC639.
The BC640TFR utilizes a TO-92 plastic package.