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The BC807-16LT1 is a PNP silicon general-purpose transistor manufactured by onsemi in a SOT-23 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -500 mA. The device offers a DC current gain range of 100 to 250 at -100 mA, with a minimum breakdown voltage of -45 V. Thermal characteristics include a junction temperature range of -55°C to +150°C and power dissipation up to 300 mW on an alumina substrate.
Verify the specific ordering suffix against the official datasheet to confirm packaging quantity and automotive qualification status. Ensure the component matches the required pinout and thermal ratings for the intended PCB layout. Confirm RoHS compliance and halogen-free status if environmental regulations apply to the final assembly process.
Select this component when a PNP transistor with moderate current handling and standard voltage ratings is required. Compare the hFE binning (BC807-16L) against higher gain variants like the BC807-25L or BC807-40L based on circuit amplification needs. Consider the S-prefix version if AEC-Q101 qualification and PPAP capability are mandatory for the application.
This part belongs to the BC807-L series of PNP silicon transistors from onsemi. It is designed as a complement to the BC817 NPN series. The device utilizes epitaxial planar die construction within a SOT-23 plastic package, optimized for automated surface-mount assembly processes.
Direct substitutes include the BC807-16LT1G and BC807-16LT3G from onsemi. Cross-manufacturer equivalents such as the Nexperia BC807-16 may be considered if electrical parameters align.