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The BC807-25-7 is a PNP small-signal transistor manufactured by Diodes Incorporated in an SOT-23 package. It features a collector-base voltage of -50 V, a collector-emitter voltage of -45 V, and a continuous collector current of -0.5 A. The device has a maximum power dissipation of 310 mW at +25°C and operates within a temperature range of -55°C to +150°C. DC current gain (hFE) ranges from 160 to 400 at IC = -100 mA. Gain bandwidth product is 100 MHz.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm exact reel size and packing quantity. Confirm that the component meets required environmental standards such as RoHS 3 compliance. Ensure the selected part number matches the intended hFE binning requirements for the target circuit design before finalizing procurement orders.
Select this component when a PNP transistor with moderate current handling and high gain is required in a compact surface-mount footprint. The BC807-25 variant specifically targets applications needing a DC current gain between 160 and 400. Consider thermal derating curves if operating near maximum junction temperatures or in confined spaces without adequate copper coverage.
This component belongs to the BC807 family of general-purpose PNP silicon transistors produced by multiple manufacturers including Diodes Incorporated. The family includes variants distinguished by different DC current gain bins, such as BC807-16 and BC807-40. These devices are widely used in consumer electronics and industrial control systems requiring low-power signal processing.
BC807-25-7-F
The top view marking code for the BC807-25 is K5B.
No, this specific part is not automotive-compliant. An automotive-compliant version is available under a separate datasheet as BC807-40Q.
The Electrostatic Discharge Human Body Model (HBM) rating is 4,000 V, classified under JEDEC Class 3A.