BC807-25LT1G

Overview

The BC807-25LT1G is a PNP silicon general-purpose transistor manufactured by onsemi in the SOT-23 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -500 mA. The device provides a DC current gain (hFE) range of 160 to 400 at a collector current of -100 mA and -1.0 V. Key electrical characteristics include a transition frequency of 100 MHz, a maximum collector-emitter saturation voltage of -0.7 V at -500 mA, and a base-emitter on-voltage of -1.2 V at -500 mA.

Feature Summary

• PNP silicon construction designed for general-purpose switching and amplification applications
• Lead-free, halogen-free, and bromine-free packaging compliant with RoHS standards
• S Prefix designation indicating AEC-Q101 qualification and PPAP capability for automotive use

Applications

• General-purpose switching circuits
• Amplifier stages
• Automotive electronics requiring unique site control

Procurement Notes

Verify the specific ordering suffix 'LT1G' corresponds to the standard tape and reel quantity of 3000 units per manufacturer specifications. Confirm that the 'S' prefix variant is required if AEC-Q101 qualification and PPAP capability are necessary for the intended application environment. Ensure compatibility with Pb-free assembly processes as defined in the datasheet.

Selection Notes

Select this component when a PNP transistor with a minimum hFE of 160 is required for low-power switching or linear amplification. The SOT-23 package is suitable for space-constrained designs. Consider the thermal resistance of 436 °C/W on an FR-5 board when calculating power dissipation limits under ambient temperature conditions above 25°C.

Part Context

This part belongs to the BC807-L series of general-purpose PNP transistors from onsemi. It is electrically complementary to the BC817-25L NPN transistor. The series includes variants with different gain ranges, such as the BC807-16L and BC807-40L, sharing identical pinouts and maximum ratings.

Replacement Considerations

Direct functional substitutes within the same family include the BC807-16LT1G and BC807-40LT1G. Verify that alternative manufacturers' equivalents meet the specific hFE binning requirements of the -25 variant.

FAQ

What is the DC current gain range for the BC807-25LT1G?

The DC current gain (hFE) ranges from 160 to 400 when measured at a collector current of -100 mA and a collector-emitter voltage of -1.0 V.

Is the BC807-25LT1G qualified for automotive applications?

Yes, devices with the 'S' prefix (e.g., SBC807-25LT1G) are AEC-Q101 qualified and PPAP capable. Standard versions without the prefix follow general industrial specifications.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is -0.7 V when the collector current is -500 mA and the base current is -50 mA.