BC807-25T116

Overview

The BC807-25T116 is a PNP general-purpose transistor manufactured by ROHM Semiconductor, housed in an SOT-23 (TO-236AB) surface-mount package. It features a maximum collector-emitter voltage of -45 V and a continuous collector current of -500 mA. The device offers three hFE gain selections, with the '25' variant typically providing a range of 160 to 400 at Ic=100mA. Key electrical limits include a collector-base voltage of -50 V, emitter-base voltage of -5 V, and power dissipation up to 350 mW. Operating temperatures span from -55°C to +150°C.

Feature Summary

• PNP polarity configuration for complementary circuit designs
• Integrated biasing resistors not present; discrete BJT structure
• SOT-23 plastic surface-mount packaging for automated assembly
• High current capability suitable for switching applications

Applications

• General-purpose switching circuits
• Amplification stages in consumer electronics
• Complementary pairs with BC817 series NPN transistors

Procurement Notes

Verify the specific manufacturer marking on the component body to confirm ROHM origin, as BC807-25 is widely produced by multiple vendors including Nexperia and Infineon. Ensure the suffix T116 matches the requested reel quantity and tape-and-reel format specifications required for your pick-and-place equipment. Cross-reference the datasheet revision date to confirm thermal resistance values align with your PCB layout constraints.

Selection Notes

Select this component when a PNP switch or amplifier is required in a compact SOT-23 footprint. The -45V rating suits low-voltage logic interfaces. Verify that the hFE bin (25) meets your amplification linearity requirements. Consider thermal derating if operating near the 150°C junction limit. Compare against BC817-25 for NPN complementarity needs in push-pull configurations.

Part Context

The BC807 series represents a family of small-signal PNP transistors designed for general-purpose use. The BC807-25 specifically denotes the middle gain bin within this lineup. Manufactured in Japan by ROHM, it adheres to JEDEC TO-236AB standards. This part is distinct from digital transistors like DTA114 which include built-in resistors. It serves as a fundamental building block in analog and digital switching circuits.

Replacement Considerations

• BC807-25 (Generic/Other Manufacturers)
• BC817-25 (NPN Complement, not direct substitute)

FAQ

What is the hFE gain range for the BC807-25 variant?

The BC807-25 typically provides a DC current gain (hFE) range of 160 to 400 when measured at Ic=100mA and Vce=-1V.

Is the BC807-25T116 a digital transistor with built-in resistors?

No, the BC807-25 is a standard bipolar junction transistor (BJT). It does not contain internal biasing resistors, unlike DTA series devices.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (Vceo) is -45 V.