BC807-40LT1G

$0.13

Description：TRANS PNP 45V 0.5A SOT23-3
Series：-

SKU:a2a1e0611bde Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS PNP 45V 0.5A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
Power - Max：300 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

Download product information

BC807-40LT1G

Overview

The BC807-40LT1G is a PNP silicon general-purpose transistor manufactured by onsemi, housed in an SOT-23 (CASE 318) surface-mount package. It features a collector-emitter voltage rating of -45 V and a continuous collector current capacity of -500 mA dc. The device offers a minimum DC current gain (hFE) of 250 at IC = -100 mA and -500 mA. Electrical characteristics include a collector-base breakdown voltage of -50 V, an emitter-base breakdown voltage of -6.0 V, and a maximum power dissipation of 225 mW on an FR-5 board. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

High current capability with a continuous collector current rating of -500 mA for switching applications.
Three distinct current gain selections available within the series to accommodate varying amplification requirements.
Compliant with RoHS standards and free from halogens and brominated flame retardants.
Designed as a complement to NPN transistors such as the BC817 series.

Applications

General-purpose switching circuits
Amplifier stages
AF-driver stages
Low-power output stages

Procurement Notes

Verify that the ordering suffix LT1G corresponds to the specific tape and reel packaging configuration required for your assembly line. Confirm that the device marking '5C' matches the intended part revision. Ensure compliance with AEC-Q101 qualification if the application demands automotive-grade reliability standards.

Selection Notes

Select this variant when a high DC current gain is necessary compared to lower-rated options like the BC807-16L or BC807-25L. Consider the thermal resistance of 436 °C/W when designing heat dissipation strategies for FR-5 boards. Verify that the -45 V collector-emitter voltage meets the circuit's maximum operating limits.

Part Context

This component belongs to the BC807-L family of PNP silicon transistors produced by onsemi. The family includes variants differentiated primarily by their DC current gain ranges. These devices are widely utilized in compact electronic designs requiring small-signal amplification or switching functions within limited board space constraints.

Replacement Considerations

BC807-25LT1G

FAQ

What is the minimum DC current gain for the BC807-40LT1G?

The minimum DC current gain (hFE) is specified as 250 at a collector current of -100 mA and -500 mA with a VCE of -1.0 V.

Is the BC807-40LT1G suitable for automotive applications?

Yes, devices with the 'S' prefix (e.g., SBC807-40LT1G) are AEC-Q101 qualified and PPAP capable, meeting unique site and control change requirements for automotive use.