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The BC807-40LT3G is a PNP silicon general-purpose transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -500 mA. The device offers three DC current gain (hFE) ranges: 100–250 for the BC807-16 variant, 160–400 for the BC807-25 variant, and 250–600 for the BC807-40 variant. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-23 package.
Verify the specific suffix 'LT3G' against official documentation to confirm the tape and reel packaging quantity and ensure the part matches the intended manufacturing site requirements. Confirm that the ordering code aligns with the required hFE binning for the BC807-40 specification.
Select this component when a PNP transistor with a -45 V rating and -500 mA current capacity is needed. Choose the BC807-40 variant specifically if a high DC current gain range of 250 to 600 is required for the application design.
This device belongs to the BC807 series of general-purpose PNP transistors produced by onsemi. The series includes variants with different gain characteristics (-16, -25, -40) designed for versatile use in consumer and industrial electronics. The LT3G designation indicates a specific surface-mount package configuration.
Compatible substitutes include the BC807-40LT1G from onsemi and equivalent parts from other manufacturers such as Nexperia or Diodes Inc., provided they meet the same electrical specifications and package dimensions.
The BC807-40 variant has a DC current gain (hFE) range of 250 to 600 at IC = -100 mA and VCE = -1.0 V.
Yes, devices with the 'S' prefix are AEC-Q101 qualified and PPAP capable for automotive applications requiring unique site and control change requirements.
The maximum collector-emitter voltage (VCEO) is -45 V.