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Product Detailed Parameters
- Description：TRANS PNP 45V 0.5A DFN1110D-3
- Series：BC807QBH-Q
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：420 mW
- Frequency - Transition：80MHz
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC807-40QBH-QZ is a PNP general-purpose transistor manufactured by Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mounted package. It features side-wettable flanks and supports high-temperature applications up to 175 °C. The device offers a collector-emitter voltage of -45 V, a continuous collector current of -500 mA, and a peak collector current of -1 A. DC current gain ranges from 250 to 600 at -100 mA. It is qualified according to AEC-Q101 for automotive use.
Feature Summary
- High power dissipation capability with thermal resistance down to 272 K/W on standard footprints
- Suitable for Automatic Optical Inspection (AOI) due to side-wettable flanks
- Low profile design with a package height of 0.5 mm
- Qualified according to AEC-Q101 for automotive applications
Applications
- General-purpose switching and amplification
- Space restricted applications
- Automotive electronics
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and qualification status. Ensure that the required current gain bin matches the application needs, as the BC807-40QBH-Q series provides distinct gain selections. Confirm compliance with RoHS directives and check for any regional export control restrictions before finalizing procurement orders.
Selection Notes
Select this component when a compact footprint and high thermal performance are required for PNP switching or amplification tasks. The DFN1110D-3 package is ideal for space-constrained designs compared to conventional leaded SMD packages. Consider the AEC-Q101 qualification if the target environment involves automotive stress conditions. Verify that the -45 V breakdown voltage meets the circuit requirements.
Part Context
This part belongs to the BC807QBH-Q series, which includes variants with different current gain specifications such as BC807-16QBH-Q and BC807-25QBH-Q. All members share the same DFN1110D-3 package and electrical limits but differ in their hFE ranges. The NPN complement for this series is the BC817-40QBH-Q.
Replacement Considerations
BC817-40QBH-Q
FAQ
What is the marking code for the BC807-40QBH-Q?
The marking code for the BC807-40QBH-Q is F8.
Is the BC807-40QBH-Q suitable for high-temperature environments?
Yes, the device is designed for high-temperature applications with a maximum junction temperature of 175 °C.
What is the transition frequency (fT) of the BC807-40QBH-Q?
The typical transition frequency is 80 MHz under conditions of VCE = -5 V and IC = -10 mA.
