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The BC807-40W-7 is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT323 surface-mount package. It features an epitaxial planar die construction and supports a continuous collector current of -500 mA with a peak collector current of -1.0 A. The device provides a collector-emitter breakdown voltage (BVCEO) of -45 V and a collector-base breakdown voltage (VCBO) of -50 V. Electrical characteristics include a minimum DC current gain (hFE) of 250 at IC = -100 mA and VCE = -1.0 V, and a gain-bandwidth product (fT) of 100 MHz. Power dissipation is rated at 200 mW, with an operating temperature range from -65°C to +150°C.
Verify the specific ordering suffix matches the required hFE binning. Confirm that the SOT323 package dimensions align with the target PCB footprint. Ensure compliance with environmental directives such as RoHS 3 and REACH if applicable to the final assembly. Check for automotive qualification requirements against AEC-Q101 standards if intended for vehicle electronics.
Select this component when a PNP transistor with high DC current gain is required in a compact SOT323 form factor. The BC807-40W-7 offers a higher minimum hFE compared to lower suffix variants. Consider the 200 mW power dissipation limit and thermal resistance values during circuit design. Verify compatibility with complementary NPN types like the BC817 series for push-pull configurations.
This part belongs to the BC807 family of PNP silicon transistors designed for general-purpose switching and amplification. The 'W' suffix indicates the SOT323 package type, while the '40' denotes the specific DC current gain classification. These devices are commonly used in low-power consumer electronics and industrial control circuits where space constraints necessitate small outline packages.
BC807-25W-7
The device marking code is K5C.
The maximum collector-base voltage (VCBO) is -50 V.
For automotive applications requiring specific change control or AEC-Q101 qualification, customers must contact Diodes Incorporated directly.