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The BC807-40W-AU_R1_000A1 is a silicon PNP epitaxial general-purpose transistor manufactured by Panjit International Inc. It operates with a collector-emitter voltage of -45 V and a continuous collector current of -500 mA, housed in an SOT-323 package. The device features a DC current gain (hFE) range of 250 to 600 at IC = -100 mA and VCE = -1 V. Key electrical limits include a collector-base breakdown voltage of -50 V and a total power dissipation of 300 mW. Transition frequency reaches 100 MHz, with a thermal resistance from junction to ambient of 420 °C/W.
Verify the specific AU suffix against official Panjit documentation to confirm it denotes the standard reel packing format rather than a functional variation. Ensure the ordering code matches the exact BC807-40W-AU series designation to guarantee correct hFE binning and SOT-323 packaging specifications during acquisition.
Select this component when high current gain is required for signal amplification or efficient switching within a compact surface-mount footprint. The SOT-323 package provides space efficiency compared to larger alternatives, while the AEC-Q101 qualification supports deployment in automotive environments demanding strict reliability standards.
This part belongs to the BC807-16W/25W/40W-AU series of silicon PNP transistors produced by Panjit International Inc. The series shares identical mechanical dimensions and maximum ratings, differentiated primarily by their DC current gain ranges. The NPN complement for this family is the BC817W-AU series.
BC807-40W,115 (Nexperia)
The marking code for the BC807-40W-AU is 7W.
The transition frequency (fT) is 100 MHz under test conditions of IC = -10 mA and VCE = -5 V.
No. Panjit explicitly disclaims authorization for use in medical instruments or aerospace machinery related to life-saving or life-sustaining applications.