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The BC80716MTF is a PNP epitaxial silicon transistor manufactured by ON Semiconductor. It operates with a collector-emitter voltage of -45 V and supports a continuous DC collector current of -800 mA. The device features a minimum DC current gain (hFE) of 100 at IC = -100 mA, with a maximum of 250 for the '16' classification. It has a power dissipation rating of 310 mW and a junction-to-ambient thermal resistance of 403 °C/W. The component is housed in a SOT-23 3L package.
Verify the specific hFE binning classification required for your design, as the '16' suffix denotes a specific gain range. Confirm that the SOT-23 3L tape and reel packing method aligns with your automated assembly equipment specifications. Ensure the absolute maximum ratings are not exceeded during operation to maintain device reliability.
Select this component when a PNP general-purpose transistor with moderate current handling is needed. The BC80716MTF offers a defined current gain range suitable for linear amplification or saturated switching. Consider the thermal resistance and power dissipation limits if operating near maximum current levels in confined spaces.
This part belongs to the BC807 series of PNP epitaxial silicon transistors. It is functionally complementary to the BC817 series NPN transistors. The device was originally distributed by Fairchild Semiconductor before integration into ON Semiconductor's portfolio. The marking code for this specific variant is 9FA.
Compatible substitutes include other BC807-16 variants from different manufacturers, such as Nexperia BC807-16L. Ensure the replacement maintains the same SOT-23 footprint and meets the -45V VCEO and -800mA IC requirements.