SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC80740MTF is a PNP epitaxial silicon transistor manufactured by ON Semiconductor. It operates with a collector-emitter voltage of -45 V and a continuous DC collector current of -800 mA. The device features a minimum DC current gain (hFE) of 170 at IC = -300 mA, classifying it as the '40' variant within the BC807 series. It is housed in a SOT-23 surface-mount package with a maximum power dissipation of 310 mW and a junction temperature rating up to 150 °C.
Verify the manufacturer source carefully, as this component originated from Fairchild Semiconductor prior to its integration into ON Semiconductor. Confirm that the ordering suffix matches the specific tape and reel packing method required for your assembly line. Ensure the part number does not contain an underscore character, as system updates may have standardized the nomenclature to use a dash instead.
Select the BC80740MTF when a high-gain PNP transistor is required to complement an NPN circuit using the BC817 series. The '40' designation indicates a specific hFE range suitable for amplification tasks. Verify that the thermal resistance and power dissipation limits align with the PCB land pattern size and ambient operating conditions of the target design.
This component belongs to the BC807 family of PNP epitaxial silicon transistors. The '40' suffix denotes the specific DC current gain classification, distinguishing it from lower gain variants like the BC807-16 or BC807-25. The MTF suffix identifies the specific SOT-23 3L tape and reel packaging configuration used for automated surface-mount assembly.
The BC80740MTF has a minimum DC current gain (hFE) of 170 when tested at a collector current of -300 mA and a collector-emitter voltage of -1 V.
The BC80740MTF serves as the direct PNP complement to the BC817 / BC818 NPN transistors, allowing for matched performance in complementary push-pull or differential amplifier configurations.
The absolute maximum collector-base voltage (VCBO) for the BC807 series is -50 V.