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BC80740WE6327BTSA1 is a PNP silicon audio frequency transistor from the BC807 series, manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 500 mA. The device utilizes SOT-23 surface-mount packaging and offers a minimum DC current gain (hFE) of 250 at IC = 100 mA. Key electrical characteristics include a transition frequency of 200 MHz and low saturation voltages for efficient switching.
Verify the specific suffix 'E6327BTSA1' against official Infineon documentation to confirm tape-and-reel specifications and RoHS compliance status. Ensure the component matches the BC807-40 variant parameters, specifically the 45V breakdown voltage and hFE group 40 classification, before finalizing procurement orders.
Select this component when designing general-purpose audio or switching circuits requiring a PNP transistor with high current gain. The BC807-40 variant provides an hFE range of 250 to 630, making it suitable for applications demanding consistent amplification factors. Consider the SOT-23 package constraints regarding thermal dissipation limits compared to larger packages.
This part belongs to the BC807/BC808 family of PNP silicon transistors designed for audio frequency applications. The BC807 series distinguishes itself with higher voltage ratings (45V) compared to the BC808 series (25V). These components are widely used as general-purpose amplifiers and switches in consumer electronics and industrial control systems.
The datasheet identifies the BC817.../W series as the direct complementary NPN type. For equivalent PNP performance, verify that substitute parts match the 45V VCEO rating and the specific hFE binning requirements of the original design.
The maximum collector-emitter voltage (VCEO) is 45 V.
The component is available in the SOT-23 surface-mount package.
For the BC807-40 variant, the DC current gain ranges from 250 to 630 at IC = 100 mA and VCE = 1 V.