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The BC807W,115 is a PNP general-purpose transistor from the Nexperia BC807W series, housed in a very small SOT323 (SC-70) Surface-Mounted Device plastic package. It features a collector-emitter voltage of -45 V and a continuous collector current of -500 mA. The device supports a peak collector current of -1 A for single pulses up to 1 ms. DC current gain ranges from 100 to 600 at VCE = -1 V and IC = -100 mA. Transition frequency reaches 80 MHz, with total power dissipation rated at 200 mW in free air and 290 mW on an FR4 PCB.
Verify the specific ordering suffix matches the required tape-and-reel or cut-tape configuration. Confirm the revision history indicates non-automotive qualification status. Ensure the component marking code aligns with the intended manufacturing site. Cross-reference the latest datasheet version before finalizing design specifications.
Select this component for designs requiring a compact PNP transistor in the SC-70 footprint. Consider the three available gain variants if specific hFE ranges are necessary. Evaluate thermal resistance values against the expected power dissipation in the target application environment.
This part belongs to the BC807W series, which includes complementary NPN devices like the BC817W. The series offers multiple gain grades (-16W, -25W, -40W) alongside the standard BC807W variant. All share the same SOT323 package and electrical limits, differing primarily in DC current gain specifications.
BC817W serves as the NPN complement. Other BC807W series variants include BC807-16W, BC807-25W, and BC807-40W for different gain requirements.