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The BC80825MTF is a PNP epitaxial silicon transistor housed in an SOT-23 package. It features a collector-emitter voltage of -25 V and a continuous collector current of -800 mA. The device provides a minimum DC current gain (hFE) of 160 at a collector current of -100 mA, with a maximum value of 400. Thermal characteristics include a power dissipation rating of 310 mW and a junction-to-ambient thermal resistance of 403 °C/W.
Verify the specific ordering suffix against ON Semiconductor's official database to ensure compatibility with system requirements. Confirm that the component meets RoHS standards and lead-free specifications. Check for any Fairchild integration updates regarding part nomenclature changes from underscores to dashes. Validate compliance with commercial certification status before procurement.
Select this component when a PNP small-signal transistor with a -25 V collector-emitter breakdown voltage is required. Ensure the application demands a continuous collector current capability up to -800 mA. Verify that the SOT-23 surface-mount package fits the board layout constraints. Consider the hFE classification range of 160 to 400 for circuit biasing stability.
This device belongs to the BC807/BC808 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by ON Semiconductor. The '25' designation indicates the -25 V collector-emitter voltage rating, distinguishing it from the -40 V rated BC808-40 variant. It serves as the complementary counterpart to the BC817/BC818 NPN series.
The BC808-40 offers a higher voltage rating of -40 V but shares similar current capabilities. The BC807-25MTF provides a higher voltage rating of -45 V. Verify pinout compatibility and thermal resistance values when substituting these variants.