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The BC817-16LT3G is an NPN silicon general-purpose transistor manufactured by onsemi. It features a collector-emitter voltage of 45 V, a continuous collector current of 500 mA, and a DC current gain (hFE) ranging from 100 to 250 at IC = 100 mA. The device operates within a junction temperature range of -65°C to +150°C and utilizes a SOT-23 package.
Verify the complete part number includes the 'G' suffix for lead-free compliance. Confirm the 'LT3' designation corresponds to the specific tape and reel packaging quantity required for the production line. Ensure the ordering information matches the requested shipping format.
Select this component when a low-voltage NPN transistor with moderate current handling is required. The BC817-16 variant offers a specific hFE binning range suitable for standard amplification tasks. Consider thermal dissipation limits in high-density PCB layouts.
This device belongs to the BC817-L series of general-purpose transistors. It is functionally complementary to the BC807 PNP counterpart. The product line supports automotive applications through specific prefix variants that meet AEC-Q101 qualification standards.
Compatible substitutes include BC817-16LT1G and NSVBC817-16LT1G. Verify pinout compatibility and electrical parameter alignment before substitution.