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The BC817-16W-AU_R1_000A1 is a silicon NPN general-purpose transistor manufactured by Panjit International Inc. It operates with a collector-emitter voltage of 45 V and supports a continuous collector current of 500 mA, with a peak pulse current capability of 1000 mA. The device features an hFE range of 100 to 250 at IC=100mA and VCE=1V. It is housed in a compact SOT-323 package with a maximum power dissipation of 300 mW and a thermal resistance (RθJA) of 420 °C/W. The transition frequency is rated at 100 MHz.
Verify the specific ordering suffix matches the required packing configuration, as the datasheet indicates a 3K pcs per 7-inch reel format. Confirm that the component marking '8S' aligns with your assembly identification protocols. Ensure the supplier provides traceability documentation referencing the lot number, as Panjit utilizes lot numbers for tracking purposes during quality inquiries or complaints.
Select this component when a small SOT-323 footprint is required alongside high current handling capabilities up to 500 mA. The BC817-16W-AU variant offers a moderate current gain range (100-250), making it appropriate for linear amplification tasks where precise gain control is less critical than cost efficiency. Consider the complementary BC807W-AU series if a matched PNP pair is needed for push-pull configurations.
This part belongs to the BC817W-AU series of silicon NPN epitaxial transistors designed for general-purpose use. It serves as the NPN counterpart to the BC807W-AU PNP series. The W-series designation denotes the SOT-323 surface-mount package, distinguishing it from other package variants within the broader BC817 family.
BC817-16W-AU
The maximum continuous DC collector current is 500 mA, while the peak pulse collector current is rated at 1000 mA.
Yes, the device is AEC-Q101 qualified, ensuring suitability for automotive electronic applications.
For the BC817-16W-AU, the DC current gain (hFE) ranges from a minimum of 100 to a maximum of 250, tested at IC=100mA and VCE=1V.