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The BC817-25_R1_00001 is an NPN general-purpose transistor from the Panjit BC817 series, housed in a plastic SOT-23 package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 500 mA. The device has a total power dissipation (PTOT) of 330 mW at 25°C ambient temperature. DC current gain (hFE) ranges from 160 to 400 when IC is 100 mA and VCE is 1 V. The junction and storage temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix matches the required packing type, such as 3K pcs on a 7-inch reel or 12K pcs on a 13-inch reel. Confirm that the device marking corresponds to '8B' for the BC817-25 variant. Ensure compliance with RoHS 2011/65/EU directives and halogen-free requirements during component qualification.
Select this component when a 45 V collector-emitter breakdown voltage and 500 mA continuous current capability are required. The BC817-25 variant offers a DC current gain range of 160 to 400, suitable for moderate amplification needs. Consider the SOT-23 package dimensions and thermal resistance characteristics for PCB layout and heat dissipation planning.
This part belongs to the BC817 series of NPN general-purpose transistors manufactured by Panjit International Inc. The series includes variants with different gain ranges, identified by suffixes -16, -25, and -40. All variants share the same electrical ratings for voltage and current but differ in their DC current gain specifications.
BC817-25_AU_LD_00001
The device marking code for the BC817-25 is 8B.
The maximum collector-base breakdown voltage (VCBO) is 50 V.
No, the datasheet explicitly states that these products are not designed or authorized for equipment requiring high levels of reliability, such as medical instruments.