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Product Detailed Parameters
- Description：BIPOLAR GENERAL PURPOSE TRANSIST
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The BC817-25B5000 is an NPN general-purpose bipolar junction transistor manufactured by Infineon Technologies. It utilizes epitaxial planar silicon technology and is housed in a surface-mount SOT-23-3 package. The device supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 500 mA. Key electrical characteristics include a DC current gain (hFE) range of 160 to 400 at 100 mA, a transition frequency of 100 MHz, and a maximum power dissipation of 250 mW.
Feature Summary
- NPN polarity configuration for general-purpose switching and amplification
- High DC current gain within the specified 160 to 400 range
- Surface-mount construction in a compact SOT-23-3 package
Applications
- General-purpose signal amplification
- Electronic switching circuits
- Driver stages for low-power loads
Procurement Notes
Verify the manufacturer marking on the component body against Infineon specifications to confirm authenticity. Ensure the part number suffix matches the exact hFE binning requirements for your design. Check RoHS compliance status through official Infineon documentation before integration into regulated products.
Selection Notes
Select this component when a standard NPN transistor with moderate current handling and defined gain bins is required. The SOT-23-3 package suits space-constrained PCB layouts. Verify that the 45 V breakdown voltage and 500 mA current limits align with the specific circuit operating conditions.
Part Context
This component belongs to the BC817 family of NPN transistors, widely used in consumer electronics and industrial control systems. The '25' designation typically indicates the specific hFE gain binning, ensuring consistent performance across production batches. It serves as a complementary counterpart to PNP devices like the BC807 series.
Replacement Considerations
- BC817-25
- BC817-25E6327HTSA1
FAQ
What is the DC current gain range for the BC817-25B5000?
The DC current gain (hFE) ranges from 160 to 400 when measured at a collector current of 100 mA.
What is the maximum power dissipation rating?
The maximum power dissipation is 250 mW at an ambient temperature of 25°C.
Is this transistor suitable for high-frequency applications?
It has a transition frequency (fT) of 100 MHz, making it suitable for audio frequencies and general-purpose switching, but not for high-frequency RF applications.
