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Product Detailed Parameters
- Description：TRANS NPN 45V 0.5A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC817-25LT1G is an NPN silicon general-purpose transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 500 mA dc. The device offers a DC current gain (hFE) range of 160 to 400 at IC = 100 mA and VCE = 1.0 V. It operates within a junction temperature range of -65°C to +150°C. Total device dissipation is rated at 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C ambient. The component utilizes a SOT-23 package.
Feature Summary
- NPN silicon construction for general-purpose switching and amplification
- Three distinct current gain selections available within the series
- Pb-free, halogen-free, and BFR-free compliant packaging
Applications
- General-purpose switching circuits
- Linear amplification stages
- Automotive applications requiring AEC-Q101 qualification
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and check for any site-specific control changes if automotive qualification is required. Ensure the requested part matches the exact marking code and date code requirements for the intended production environment.
Selection Notes
Select this component when a 45 V NPN transistor with 500 mA capability is needed. Choose the BC817-25 variant specifically for applications requiring a minimum hFE of 160 at 100 mA. Consider thermal derating factors if operating near maximum power dissipation limits in confined spaces.
Part Context
This part belongs to the BC817-L series of NPN general-purpose transistors from onsemi. It shares the same physical SOT-23 footprint as the BC817-16L and BC817-40L variants, differing primarily in their specified DC current gain ranges. The LT1G designation indicates a tape and reel packaging format.
Replacement Considerations
BC817-25LT3G
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
What is the DC current gain range for the BC817-25 variant?
The DC current gain (hFE) ranges from 160 to 400 when measured at IC = 100 mA and VCE = 1.0 V.
Is this component qualified for automotive use?
Yes, devices with the NSV prefix are AEC-Q101 qualified and PPAP capable for automotive applications.
