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The BC817-25LT3G is an NPN silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of 45 V and a continuous collector current of 500 mA dc. The device features a DC current gain (hFE) ranging from 160 to 400 at IC = 100 mA and VCE = 1.0 V. Electrical characteristics include a collector-base breakdown voltage of 50 V, emitter-base breakdown voltage of 5.0 V, and a maximum collector-emitter saturation voltage of 0.7 V at 500 mA. Thermal dissipation reaches 225 mW on an FR-5 board and 300 mW on an alumina substrate. The component utilizes a SOT-23 package.
Verify the specific ordering suffix against official documentation to confirm packaging type and quantity. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans.
Select this component when a standard NPN transistor with moderate current handling and defined gain ranges is required. Ensure the operating temperature range aligns with system thermal constraints and verify pinout compatibility with existing PCB layouts.
This part belongs to the BC817-L series of general-purpose transistors. The series includes variants with different gain bands, such as BC817-16L and BC817-40L, allowing designers to choose appropriate amplification levels without changing the physical footprint or basic electrical ratings.
Compatible substitutes within the same family include BC817-16LT3G and BC817-40LT3G. Verify that the alternative variant's current gain specifications meet the circuit design requirements before implementation.
The minimum DC current gain (hFE) is 160 and the maximum is 400 when measured at IC = 100 mA and VCE = 1.0 V.
Yes, devices with the 'S' prefix (e.g., SBC817-25L) are AEC-Q101 qualified and PPAP capable for automotive applications.
Total device dissipation is 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C ambient temperature.