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Product Detailed Parameters
- Description：TRANS NPN 45V 0.5A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC817-25LT3G is an NPN silicon general-purpose transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 45 V and continuous collector current of 500 mA. The device offers a DC current gain (hFE) range of 160 to 400 at IC = 100 mA, VCE = 1.0 V. Key electrical parameters include a collector-base breakdown voltage of 50 V, emitter-base breakdown voltage of 5.0 V, and a maximum collector-emitter saturation voltage of 0.7 V at IC = 500 mA, IB = 50 mA. The transition frequency (fT) is 100 MHz. Thermal characteristics specify total power dissipation up to 300 mW on an alumina substrate and -65°C to +150°C junction temperature range.
Feature Summary
- High current capability with 500 mA continuous collector current rating
- Three distinct DC current gain selections for varied amplification requirements
- Low collector-emitter saturation voltage for efficient switching performance
- Surface-mount SOT-23 package design for compact circuit integration
Applications
- General-purpose switching circuits
- Audio amplifier stages
- Power management applications
Procurement Notes
Verify the specific ordering suffix LT3G corresponds to the 10,000-unit tape and reel packaging configuration. Confirm RoHS compliance status and Pb-free designation during procurement. Ensure the component matches the required hFE binning specifications for the intended application circuit design.
Selection Notes
Select this variant when a minimum DC current gain of 160 is required at 100 mA collector current. Compare against BC817-16L and BC817-40L variants based on specific gain bandwidth needs. Verify thermal dissipation requirements against the specified 300 mW limit on alumina substrates for high-current operation scenarios.
Part Context
This component belongs to the BC817-16L/25L/40L series of NPN silicon transistors. It serves as the complementary counterpart to the BC807 PNP series. The device utilizes the SOT-23 (TO-236AB) plastic surface-mount package. It is designed for general-purpose amplification and switching tasks in consumer and industrial electronics.
Replacement Considerations
BC817-25,215
FAQ
What is the DC current gain range for the BC817-25L variant?
The DC current gain (hFE) ranges from 160 to 400 when tested at IC = 100 mA and VCE = 1.0 V.
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.7 V at IC = 500 mA and IB = 50 mA.
Is the BC817-25LT3G RoHS compliant?
Yes, the device is Pb-free, Halogen-free/BFR-free, and RoHS compliant according to the manufacturer datasheet.
