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The BC817-25Q-7-F is a single NPN small-signal Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated. It features a collector-emitter voltage of 45V, continuous collector current of 0.5A, and peak pulse current of 1.0A. The device has a DC current gain range of 160 to 400 at IC=100mA and VCE=1V, with a transition frequency of 100MHz. Power dissipation is rated at 310mW in standard conditions and 350mW on specific copper layouts. It operates within a temperature range of -65°C to +150°C.
Verify the component matches the exact part number BC817-25Q-7-F from Diodes Incorporated. Confirm the datasheet revision DS38331 Rev. 7 - 2 aligns with your design requirements. Ensure the SOT23 package marking K6B corresponds to the received inventory. Validate that the supplier provides traceability documentation suitable for automotive quality standards if required by your application specifications.
Select this component when an NPN transistor with a minimum hFE of 160 is required. It serves as the complementary pair to the BC807-25Q PNP transistor. Consider its 45V breakdown voltage and 0.5A current rating for low-power signal processing tasks. Verify thermal management needs against the 310mW or 350mW dissipation limits based on PCB copper coverage.
This device belongs to the BC817-16Q/-25Q/-40Q family of 45V NPN small-signal transistors. The '25' designation indicates a specific DC current gain binning range compared to the '16' and '40' variants. All members share identical electrical ratings except for the hFE specification. They are housed in the same SOT23 plastic package for interchangeability in footprint-constrained designs.
BC817-16Q-7-F
The DC current gain (hFE) ranges from a minimum of 160 to a maximum of 400 when measured at IC = 100mA and VCE = 1V.
Yes, the BC817-25Q is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The peak pulse collector current (ICM) is rated at 1.0A for single pulses.