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The BC817-25W-AU_R1_000A1 is a silicon NPN general-purpose transistor manufactured by Panjit International Inc. It operates with a collector-emitter voltage of 45 V and supports a maximum DC collector current of 500 mA. The device features a minimum DC current gain (hFE) of 160 at IC=100mA, with a transition frequency of 100 MHz. Packaged in an SOT-323 form factor, it dissipates up to 300 mW of power and functions within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official Panjit documentation to confirm package type and reel specifications. Ensure compliance with AEC-Q101 qualification requirements if deploying in automotive environments. Confirm that the SOT-323 marking code '8V' matches the intended part revision before finalizing procurement orders.
Select this component when a compact NPN transistor with high current gain is required for space-constrained designs. The SOT-323 package offers a smaller footprint compared to standard SOT-23 variants while maintaining similar electrical performance. Consider the 160 to 400 hFE range for precise biasing needs in low-power signal processing tasks.
This component belongs to the BC817-W series of silicon NPN epitaxial transistors produced by Panjit. It serves as the NPN counterpart to the BC807W-AU PNP series. The device utilizes planar technology optimized for surface-mount assembly, providing robust performance in consumer electronics and industrial control systems requiring reliable switching capabilities.
BC817-25W (Nexperia)
The DC current gain (hFE) ranges from a minimum of 160 to a maximum of 400 when tested at IC=100mA and VCE=1V.
Yes, the BC817-25W-AU series is qualified according to the AEC-Q101 standard for automotive electronic components.
The total power dissipation (PTOT) is rated at 300 mW under standard ambient temperature conditions.