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The BC817-40_R1_00001 is an NPN general-purpose transistor from the Panjit BC817 series, housed in a plastic SOT-23 surface-mount package. It features an epitaxial silicon planar design with a collector-emitter voltage of 45 V and continuous collector current of 500 mA. The device supports a total power dissipation of 330 mW and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 250 to 600 at Ic=500mA, and a transition frequency (fT) of 100 MHz.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm reel specifications and tape-and-reel dimensions. Ensure compatibility with standard SOT-23 footprint layouts during PCB design. Confirm that the ordering code matches the required hFE binning (BC817-40) for intended circuit performance.
Select this component when a small-form-factor NPN transistor is required for low-power signal amplification or switching. The BC817-40 variant offers higher current gain compared to lower-bin versions, suitable for applications demanding consistent amplification factors. Verify thermal management requirements given the 330 mW power dissipation limit in the SOT-23 package.
This part belongs to the BC817 series of NPN general-purpose transistors manufactured by Panjit International Inc. The series includes variants differentiated by current gain bins (BC817-16, BC817-25, BC817-40), all sharing identical electrical ratings and mechanical packaging. The device is designed for cost-effective mass production in consumer and industrial electronic assemblies.
Compatible substitutes include other NPN transistors in SOT-23 packages with similar VCEO (≥45V), IC (≥500mA), and PTOT (≥330mW) ratings. Verify pinout compatibility and thermal resistance characteristics before substitution.