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Product Detailed Parameters
- Description：TRANS NPN 45V 0.5A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT),Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The onsemi BC817-40LT1 is an NPN silicon general-purpose transistor housed in a SOT-23 (TO-236AB) surface-mount package. It features a collector-emitter voltage of 45 V and a continuous collector current rating of 500 mA. The device provides a DC current gain range of 250 to 600 at IC = 100 mA, with a maximum collector-emitter saturation voltage of 0.7 V at 500 mA. Thermal dissipation reaches 225 mW on an FR-5 board and 300 mW on an alumina substrate. The transition frequency is specified at 100 MHz.
Feature Summary
- High current capability suitable for switching and amplification tasks
- Low collector-emitter saturation voltage for efficient power handling
- Three distinct DC current gain selections available within the series
Applications
- General-purpose switching circuits
- Amplifier stages
- Automotive applications requiring AEC-Q101 qualification
Procurement Notes
Verify the specific ordering suffix LT1 corresponds to the tape and reel packaging configuration required for your assembly line. Confirm that the component meets RoHS compliance standards and lead-free requirements for your manufacturing process. Ensure the marking code matches the intended gain bin for your design specifications.
Selection Notes
Select this component when a standard NPN transistor with moderate current handling and defined gain ranges is required. The SOT-23 package offers space efficiency for compact designs. Consider the thermal resistance characteristics if operating near maximum power dissipation limits or in high ambient temperature environments.
Part Context
This part belongs to the BC817L family of NPN silicon transistors manufactured by onsemi. The series includes variants with different gain bins (-16, -25, -40) to accommodate various circuit requirements. The 'L' designation indicates the specific plastic package style used for these general-purpose devices.
Replacement Considerations
BC817-40LT1G
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
Is this component qualified for automotive use?
Yes, devices with the S and NSV prefixes are AEC-Q101 qualified and PPAP capable.
What is the typical DC current gain range?
For the BC817-40 variant, the DC current gain (hFE) ranges from 250 to 600 at IC = 100 mA and VCE = 1.0 V.
