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The BC817-40LT1G is a general-purpose NPN silicon transistor manufactured by onsemi. It operates with a collector-emitter voltage of 45 V and supports a continuous collector current of 500 mA dc. The device provides a DC current gain (hFE) ranging from 250 to 600 at IC = 100 mA, VCE = 1.0 V. It features a maximum collector-emitter saturation voltage of 0.7 V at IC = 500 mA and IB = 50 mA. The component utilizes an SOT-23 package and is rated for junction temperatures between -65°C and +150°C.
Verify the specific ordering suffix LT1G corresponds to the required tape and reel packaging configuration. Confirm that the AEC-Q101 qualification status meets project requirements if used in automotive contexts. Ensure the selected variant aligns with the necessary hFE binning specifications for the intended circuit design.
Select this component when a standard NPN transistor with moderate power dissipation capabilities is required. The BC817-40 variant offers higher current gain compared to lower suffix versions. Consider the SOT-23 footprint constraints and thermal resistance characteristics during layout planning.
This part belongs to the BC817 series of general-purpose NPN transistors produced by onsemi. The series includes variants differentiated primarily by their DC current gain ranges. The BC817-40 specifically denotes the highest gain tier within this family, designed for applications demanding efficient signal amplification.
Compatible substitutes include NSVBC817-40LT1G and SBC817-40LT1G from the same manufacturer family.