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The BC817-40W-AQ is a single NPN bipolar junction transistor manufactured by Diotec Semiconductor in an SOT-323 surface-mount package. It features a maximum collector current of 500 mA and a collector-emitter breakdown voltage (VCEO) of 45 V, with a collector-base voltage (VCES) of 50 V. The device has a power dissipation rating of 200 mW and a transition frequency (fT) of 100 MHz. It operates within a junction temperature range of -55°C to +150°C. The component complies with RoHS standards and is designated for automotive applications under AEC-Q101 qualification.
Verify the specific suffix designation during procurement to confirm the component's qualification status. The '-AQ' suffix indicates the part is currently undergoing AEC-Q101 qualification rather than being fully certified. Confirm that the required automotive reliability standards align with this qualification stage before finalizing orders.
Select this component when a compact SOT-323 footprint is required for general-purpose NPN switching or amplification. Ensure the design accommodates the 200 mW power dissipation limit at elevated ambient temperatures. Verify that the 500 mA collector current rating meets the load requirements and that the three available hFE gain groups satisfy the circuit's biasing needs.
This component belongs to the BC817W series of SMD general-purpose NPN transistors produced by Diotec Semiconductor. The 'W' suffix denotes the SOT-323 case outline, while the '-40' specifies the 45 V collector-emitter voltage rating. The product line includes complementary PNP transistors such as the BC807W and BC808W for push-pull configurations.
BC817-40W-Q
The -AQ suffix signifies that the BC817-40W-AQ is in the process of AEC-Q101 qualification.
No, it is limited to a power dissipation of 200 mW and is intended for general-purpose signal processing and switching.
The datasheet recommends the BC807W or BC808W as complementary PNP transistors.