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The onsemi BC817-40WT1G is a general-purpose NPN transistor housed in the SC-70 (SOT-323) package. It features a collector-emitter voltage of 45 V and a continuous collector current of 500 mA. The device offers a DC current gain ranging from 40 to 600 at specific test conditions, with a maximum collector-emitter saturation voltage of 0.7 V. Total device dissipation is rated at 460 mW, supported by a thermal resistance junction-to-ambient of 272 °C/W. The transition frequency is specified at 100 MHz.
Verify the ordering suffix 'T1G' corresponds to the 3000-unit tape and reel packaging configuration as documented in the official datasheet. Confirm that the NSV prefix variant meets specific automotive quality standards if required for the application. Ensure compliance with RoHS and Pb-Free material declarations during procurement validation.
Select this component for designs requiring a compact SMD NPN transistor with moderate current handling. The SC-70 package suits space-constrained layouts. Evaluate the 460 mW power dissipation limit against thermal constraints. Verify that the 45 V breakdown voltage aligns with circuit operating levels. Consider the AEC-Q101 qualification for robust automotive environments.
This part belongs to the BC817 series of general-purpose NPN transistors manufactured by onsemi. The series includes variants with different current gain rankings and complementary PNP types. The BC817-40W specifically denotes the 45 V rating and SC-70 package form factor within this product family.
NSVBC817-40WT1G serves as a verified substitute with identical electrical characteristics and packaging.