SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC81740NMMTF is an NPN epitaxial silicon transistor manufactured by ON Semiconductor. It operates with a collector-emitter voltage of 45 V and supports a continuous collector current of 800 mA. The device features a DC current gain (hFE) range of 250 to 630 at IC = 100 mA and VCE = 1 V. It has a maximum power dissipation of 310 mW and a transition frequency of 100 MHz. The component is housed in a SOT-23 surface-mount package.
Verify the manufacturer part number against official ON Semiconductor documentation, as Fairchild order numbers may require suffix adjustments due to system integration. Confirm that the specific ordering suffix matches the required tape and reel packing and matte finish package type before finalizing procurement orders.
Select this component when a general-purpose NPN transistor with moderate current handling and defined hFE ranges is required. Ensure the application voltage does not exceed the 45 V collector-emitter rating. Consider the thermal resistance characteristics if operating near the maximum power dissipation limit in confined spaces.
This device belongs to the BC817 series of NPN epitaxial silicon transistors. It serves as the complementary counterpart to the BC807 series PNP transistors. The product line is designed for general-purpose amplification and switching tasks, offering standardized electrical characteristics across different gain classifications.
BC817-40
The '40' suffix indicates the DC current gain (hFE) classification, specifying a minimum gain of 250 and a maximum of 630 under standard test conditions.
No, ON Semiconductor products are not designed, intended, or authorized for use as critical components in life support systems or medical devices without express written approval.
The datasheet specifies Tape and Reel as the standard packing method for this device variant.