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The BC817K16E6327HTSA1 is an NPN silicon general-purpose audio frequency transistor manufactured by Infineon Technologies. It operates with a collector-emitter voltage of 45 V and supports a maximum continuous collector current of 500 mA. The device features a DC current gain (hFE) group 16, ranging from 100 to 250 at IC = 100 mA and VCE = 1 V. It has a transition frequency of 170 MHz and a total power dissipation of 500 mW in the SOT-23 package. Qualified according to AEC-Q101 standards, it functions within a junction temperature range up to 150 °C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific hFE binning corresponds to Group 16 requirements for your circuit design. Ensure storage conditions remain within specified limits to maintain lead integrity prior to soldering.
Select this component when a high-gain NPN transistor is required for low-power audio or signal applications. The SOT-23 package offers compact surface-mount integration. Verify that the 500 mA current rating and 45 V voltage limits align with the operational parameters of the target system.
This part belongs to the BC817K series of NPN silicon transistors designed for general-purpose use. The 'K' suffix indicates the SOT-23 package variant, while '16' specifies the DC current gain grouping. The E6327HTSA1 suffix denotes specific ordering and packaging details defined by Infineon.
Direct substitutes include other BC817 variants with matching gain groups, such as BC817K25 or BC817K40, provided the hFE ranges are compatible. Cross-referencing pinouts and thermal resistance values is essential when considering alternative manufacturers.
It identifies the DC current gain (hFE) grouping, which ranges from 100 to 250 under standard test conditions.
Yes, the BC817K series is qualified according to the AEC-Q101 stress test qualification for automotive grade components.
The total power dissipation is 500 mW when the case temperature is maintained at or below 115 °C.