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BC817K16WH6327XTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 500 mA. The device features a DC current gain (hFE) ranging from 100 to 250 at a collector current of 100 mA. It has a transition frequency of 100 MHz and a power dissipation rating of 310 mW. The component is housed in a surface-mount PG-SOT323 package and supports operating temperatures up to 150°C.
Verify the specific suffix '16' against official Infineon documentation to confirm the exact hFE binning requirements, as suffixes often denote specific gain ranges or packaging variations. Confirm RoHS compliance status through the manufacturer's environmental declaration. Ensure the PG-SOT323 footprint matches the target PCB design constraints before finalizing procurement orders.
Select this component when a compact NPN transistor with moderate current capacity is required for space-constrained designs. The PG-SOT323 package offers a small form factor suitable for high-density mounting. Consider the 100 MHz transition frequency for applications requiring moderate speed, while ensuring the thermal management strategy accommodates the 310 mW power dissipation limit in the chosen enclosure.
This part belongs to the BC817 series of NPN transistors produced by Infineon Technologies. The series is widely recognized for its reliability in consumer electronics and industrial control systems. The specific model integrates standard electrical characteristics optimized for cost-effective mass production while maintaining strict quality standards defined by automotive and industrial certifications.
Consult official cross-reference lists for verified substitutes such as BC817-16 variants from other manufacturers. Ensure replacement parts match the PG-SOT323 package dimensions and pinout configuration. Verify that alternative components meet or exceed the 45 V VCEO and 500 mA Ic specifications to maintain circuit integrity.