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The BC817K25E6433HTMA1 is an NPN silicon general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and operates within a temperature range of -65°C to +150°C. The device supports a maximum collector current of 500 mA and features a collector-emitter voltage rating of 45 V, with a collector-base voltage of 50 V and an emitter-base voltage of 5 V. Key electrical parameters include a transition frequency of 170 MHz, a power dissipation capacity of 500 mW, and a DC current gain (hFE) ranging from 160 to 400 at 100 mA and 1 V.
Verify the specific suffix E6433 against official Infineon documentation to confirm exact binning and packaging specifications. Confirm availability status as this component may be subject to lifecycle changes or discontinuation notices. Ensure compatibility with existing supply chain requirements before finalizing procurement decisions.
Select this component when automotive reliability is required alongside standard NPN switching capabilities. Compare hFE ranges against circuit requirements to ensure adequate gain margins. Verify that the SOT-23-3 package fits the PCB layout constraints and that the 500 mA current rating meets the load demands.
This part belongs to the BC817 series of NPN transistors, designed for general-purpose use. The K25 designation typically indicates a specific current gain binning category within the family. It shares core electrical characteristics with other variants in the series but differs in gain distribution and potential automotive qualification status.
Consult official Infineon substitution guides for verified alternatives. Generic BJT replacements may not match the AEC-Q100 qualification or specific hFE binning requirements of the original design.