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The BC817UPNB6327XT is an NPN silicon dual bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is housed in a surface-mount SC-74-6 package and designed for audio frequency applications. Key electrical parameters include a maximum collector-emitter voltage of 45 V, a collector-base voltage of 50 V, and an emitter-base voltage of 5 V. The device supports a continuous DC collector current of 500 mA with a peak collector current rating of 1000 mA. Power dissipation is rated at 330 mW, and the gain-bandwidth product reaches 170 MHz. The component operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'B' against official Infineon documentation to confirm if it denotes a distinct binning or packaging variant compared to standard BC817UPNE6327HTSA1. Confirm end-of-life status as similar variants are marked obsolete. Ensure RoHS compliance details match the specific manufacturing batch requirements for your assembly process.
Select this component when a dual NPN BJT array is required in an SC-74-6 footprint. Compare the 500 mA continuous current limit and 330 mW power dissipation against thermal constraints. Verify that the 45 V collector-emitter voltage meets the circuit's maximum operating conditions. Consider the 170 MHz transition frequency for high-speed switching needs.
This part belongs to the BC817 series of small-signal NPN transistors. It shares the same core die and electrical characteristics as the BC817U family but utilizes specific ordering suffixes to denote tape-and-reel packaging or specific customer codes. It serves as a common replacement for discrete dual transistor setups in consumer electronics and automotive modules.
BC817UPNE6327HTSA1 is a verified equivalent from the same manufacturer with identical electrical specifications and pinout. Cross-reference with other SC-74-6 dual NPN arrays like the 2N7002 equivalents only if pin compatibility and current ratings are strictly validated.