BC817UPNB6327XT

BC817UPNB6327XT

$0.05
  • Description:TRANS NPN/PNP 45V 500MA PG-SC74
  • Series:-

SKU:4d63d75cfa62 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 45V 500MA PG-SC74
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):500mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
  • Power - Max:330mW
  • Frequency - Transition:170MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:PG-SC74-6
  • Grade:-
  • Qualification:-

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BC817UPNB6327XT

Overview

The BC817UPNB6327XT is an NPN silicon dual bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is housed in a surface-mount SC-74-6 package and designed for audio frequency applications. Key electrical parameters include a maximum collector-emitter voltage of 45 V, a collector-base voltage of 50 V, and an emitter-base voltage of 5 V. The device supports a continuous DC collector current of 500 mA with a peak collector current rating of 1000 mA. Power dissipation is rated at 330 mW, and the gain-bandwidth product reaches 170 MHz. The component operates within a temperature range of -65°C to +150°C.

Feature Summary

  • Dual NPN configuration integrated into a compact surface-mount package for space-efficient circuit designs.
  • High current handling capability suitable for switching and amplification tasks in general-purpose applications.
  • Automotive qualification compliant with AEC-Q100 standards for enhanced reliability.

Applications

  • General-purpose signal amplification
  • Switching circuits
  • Audio frequency processing

Procurement Notes

Verify the specific suffix 'B' against official Infineon documentation to confirm if it denotes a distinct binning or packaging variant compared to standard BC817UPNE6327HTSA1. Confirm end-of-life status as similar variants are marked obsolete. Ensure RoHS compliance details match the specific manufacturing batch requirements for your assembly process.

Selection Notes

Select this component when a dual NPN BJT array is required in an SC-74-6 footprint. Compare the 500 mA continuous current limit and 330 mW power dissipation against thermal constraints. Verify that the 45 V collector-emitter voltage meets the circuit's maximum operating conditions. Consider the 170 MHz transition frequency for high-speed switching needs.

Part Context

This part belongs to the BC817 series of small-signal NPN transistors. It shares the same core die and electrical characteristics as the BC817U family but utilizes specific ordering suffixes to denote tape-and-reel packaging or specific customer codes. It serves as a common replacement for discrete dual transistor setups in consumer electronics and automotive modules.

Replacement Considerations

BC817UPNE6327HTSA1 is a verified equivalent from the same manufacturer with identical electrical specifications and pinout. Cross-reference with other SC-74-6 dual NPN arrays like the 2N7002 equivalents only if pin compatibility and current ratings are strictly validated.

BC817UPNB6327XTBC817UPNB6327XT
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