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The Diotec Semiconductor BC818-16 is a general-purpose NPN bipolar junction transistor housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage rating of 30 V with the base shorted, and a maximum DC collector current of 800 mA. The device provides a minimum DC current gain (hFE) of 160 at a collector current of 100 mA. Power dissipation is rated at 300 mW when mounted on a printed circuit board with 3 mm² copper pads per terminal. The transition frequency is typically 100 MHz.
Verify the specific suffix to confirm the operating grade. The absence of a suffix indicates industrial grade availability. A -C suffix denotes commercial grade. Ensure the selected variant meets the required reliability standards for the intended application environment before finalizing procurement.
Select this component for standard commercial or industrial applications requiring moderate current handling. Verify that the 30 V collector-emitter voltage rating aligns with the circuit requirements. Confirm the hFE grouping matches the necessary amplification characteristics. Check compliance requirements against project specifications.
This part belongs to the BC817/BC818 series of SMD general-purpose NPN transistors manufactured by Diotec Semiconductor. The series offers complementary PNP options and various gain groupings. The BC818 variant specifically defines lower voltage ratings compared to the BC817 counterpart within the same family.
BC817-16
The maximum collector-emitter voltage (VCES) with the base shorted is 30 V.
The BC818-16 has a lower collector-emitter voltage rating of 30 V compared to the 50 V rating found in the BC817-16.
The transistor is supplied in an SOT-23 (TO-236) surface-mount plastic package.