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The Diotec Semiconductor BC818-25 is a general-purpose NPN bipolar junction transistor (BJT) designed for surface-mount applications. It utilizes an SOT-23 (TO-236) plastic package and operates with a maximum collector current of 800 mA. The device features a collector-emitter breakdown voltage (VCEO) of 25 V and a power dissipation rating of 310 mW at 25°C ambient temperature. It belongs to the -25 gain group, providing a DC current gain (hFE) range of 160 to 400 when measured at IC = 100 mA and VCE = 1 V. The transition frequency (fT) is typically 100 MHz.
Verify the specific ordering suffix against the manufacturer's documentation to confirm the exact grade and compliance level. Standard versions without suffixes are industrial grade, while suffixes like -C indicate commercial grade. Confirm that the component meets AEC-Q101 requirements if automotive qualification is necessary for the design.
Select this component based on the required collector-emitter voltage and current gain specifications. The BC818-25 offers a 25 V VCEO rating suitable for low-voltage logic interfacing. Ensure the thermal management strategy accounts for the 310 mW power dissipation limit in the SOT-23 package under expected operating conditions.
This part belongs to the BC817/BC818 family of SMD general-purpose NPN transistors manufactured by Diotec Semiconductor. The family shares common mechanical dimensions and basic electrical characteristics but varies in breakdown voltage and current gain grouping. The BC818 variant specifically provides lower voltage ratings compared to the BC817 series.
Check for direct equivalents from other manufacturers offering identical pinouts and electrical parameters. Verify that any substitute maintains the same SOT-23 footprint and meets the required hFE and VCEO specifications for the circuit application.