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Product Detailed Parameters
- Description：TRANS NPN 25V 0.5A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC818-40LT1G is a general-purpose NPN bipolar junction transistor manufactured by onsemi. It is housed in the SOT-23 surface-mount package and utilizes silicon technology. The device supports a maximum collector current of 500 mA and features a collector-emitter breakdown voltage (VCEO) of 40 V, with a collector-base voltage (VCBO) of 60 V. Key electrical characteristics include a transition frequency (fT) of 100 MHz and a DC current gain (hFE) ranging from 100 to 630. Power dissipation is rated at 310 mW, and it operates within a temperature range of -65°C to +150°C.
Feature Summary
- Provides high DC current gain suitable for amplification applications
- Designed for general-purpose switching and signal processing tasks
- Utilizes low-profile SOT-23 packaging for compact circuit board integration
Applications
- General-purpose amplifier circuits
- Switching applications in consumer electronics
- Driver stages for logic interfaces
Procurement Notes
Verify the specific suffix LT1G against official onsemi documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the component matches the exact 40V rating required for your design, as other variants in the series may have different voltage specifications. Cross-reference the manufacturer part number directly with the datasheet to avoid confusion with similar packages or ratings.
Selection Notes
Select this component when a 40V NPN transistor with 500mA capability is required in an SOT-23 footprint. Compare the hFE binning requirements of your application against the 100-630 range provided. Consider thermal management needs given the 310mW power dissipation limit in small packages. Verify that the 100MHz transition frequency meets the speed requirements of your signal path.
Part Context
This part belongs to the BC818 family of NPN transistors produced by onsemi. The family offers various voltage ratings and gain configurations packaged in SOT-23. The BC818-40 variant specifically targets applications requiring higher voltage tolerance than standard 25V versions while maintaining the same current handling capabilities and form factor.
Replacement Considerations
BC818-40DIT1G
FAQ
What is the maximum collector-emitter voltage for this component?
The maximum collector-emitter voltage (VCEO) is 40 V.
Does this transistor support surface mount installation?
Yes, it is designed for surface mount installation in an SOT-23 package.
What is the operating temperature range?
The operating temperature range extends from -65°C to +150°C.
