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The BC818-40WE6327 is an NPN single bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 25 V and a continuous collector current rating of 500 mA. The device operates with a transition frequency of 170 MHz and dissipates up to 500 mW of power. It is housed in a PG-SOT23 surface-mount package and supports junction temperatures up to 150°C.
Verify the exact suffix against official Infineon documentation, as 'BC818-40' typically denotes a specific binning or variant within the BC818K family. Confirm RoHS compliance status and packaging type directly from the manufacturer's datasheet before procurement. Ensure the component matches the required PG-SOT23 footprint and electrical specifications for your design.
Select this component when a standard NPN BJT with 25V breakdown and 500mA current capacity is required in a compact SOT-23 form factor. Consider the 170MHz transition frequency for high-speed switching needs. Verify that the 500mW power dissipation limit aligns with your thermal management strategy and ambient operating conditions.
This part belongs to the BC818 series of small-signal NPN transistors. It is designed for general-purpose amplification and switching tasks. The device is widely used in consumer electronics and industrial equipment due to its reliability and compact surface-mount packaging suitable for automated assembly processes.
Consult Infineon's official cross-reference guides for verified substitutes. Generic equivalents may vary in hFE binning or saturation voltage. Do not assume pinout compatibility without verifying the specific package variant (PG-SOT23) against the candidate part.