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The BC818K-25 is a single NPN bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device supports a maximum collector current of 500 mA and features a collector-emitter breakdown voltage of 25 V. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 5 V, and a power dissipation rating of 500 mW. The component offers a transition frequency of 170 MHz and operates within a temperature range of -65°C to +150°C.
Verify the specific suffix against official documentation to confirm exact binning and packaging specifications. Confirm RoHS compliance status and check for end-of-life notices or obsolescence warnings directly from the manufacturer before finalizing procurement plans.
Select this component when a 25 V NPN BJT with SMD mounting is required. Ensure the design accommodates the 500 mA continuous collector current limit and verify that the thermal management strategy supports the 500 mW power dissipation capability in the intended application environment.
This part belongs to the BC817/BC818 series of small-signal transistors. The BC818 variant specifically provides a 25 V breakdown voltage, distinguishing it from the higher-voltage BC817 models. It is designed for cost-effective integration into compact electronic designs requiring reliable NPN switching performance.
Cross-reference with other manufacturers' 2N3904 equivalents or BC818 variants from different suppliers. Verify pinout compatibility and ensure replacement parts meet the same AEC-Q100 automotive qualification requirements if applicable.