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The BC846AE6327 is a single NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SMD/SMT SOT-23-3 package and is designated as a general-purpose audio frequency (AF) device. The component has a maximum collector current of 100 mA, a collector-emitter voltage (VCEO) of 45 V, and a collector-base voltage (VCBO) of 65 V. Key electrical parameters include an emitter-base voltage (VEBO) of 6 V, a power dissipation (Pd) of 330 mW, and a gain-bandwidth product (fT) of 250 MHz. Operating temperatures range from -65°C to +150°C.
This component is officially listed with a status of Discontinued or End-of-Life by the manufacturer. Procurement should be approached with caution due to potential unavailability through standard distribution channels. Verify current stock levels with authorized distributors immediately if replacement sourcing is required for existing designs.
Select this part only if legacy compatibility with the BC846A series is strictly required. Given its discontinuation status, engineers should evaluate alternative modern NPN transistors with similar VCEO, IC, and fT specifications that are currently in active production to ensure long-term supply chain stability.
The BC846AE6327 belongs to the BC846 series of NPN silicon transistors produced by Infineon Technologies. This series is widely recognized for low noise and high linearity characteristics suitable for audio and RF applications. The specific suffix 'E6327' typically denotes the tape and reel packaging format used for automated surface mount assembly processes.
The maximum collector-emitter voltage (VCEO) is 45 V.
No, the BC846AE6327 is specifically designed for surface mount technology (SMD/SMT) in an SOT-23-3 package.