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The BC846ALT3G is an NPN silicon general-purpose transistor from the BC846ALT1G series, manufactured by onsemi. It features a collector-emitter voltage of 65 V and a collector-base voltage of 80 V. The device supports a continuous collector current of 100 mA with a power dissipation of 225 mW in the SOT-23 package. It operates within a junction temperature range of -55°C to +150°C and offers a gain-bandwidth product of 100 MHz.
Verify the specific ordering suffix 'T3G' corresponds to the 10,000-unit tape and reel shipping configuration as documented in the official onsemi ordering information table. Confirm that the device marking matches the specified code for this variant to ensure correct part identification during assembly.
Select this component when a single NPN transistor with a 65 V collector-emitter rating is required for low-power applications. The SOT-23 package is suitable for space-constrained designs. Ensure the application current remains within the 100 mA continuous limit and thermal constraints are managed according to the specified power dissipation ratings.
This device belongs to the BC846ALT1G series, which includes variants differentiated by DC current gain ranges (A, B, C grades). The BC846ALT3G specifically denotes the 'A' grade gain bin packaged in a 10,000-unit reel format. It shares the same electrical characteristics as other BC846A variants but differs in packaging quantity.
BC846ALT1G
In the SOT-23 package, Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
Standard BC846ALT3G units are not explicitly listed as AEC-Q101 qualified; devices with the 'S' or 'NSV' prefix are designated for automotive and unique site requirements.
The maximum junction and storage temperature range extends up to +150°C.