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The BC846APN_R1_00001 is a dual surface-mount NPN/PNP bipolar junction transistor (BJT) manufactured by Panjit International Inc. It features complementary NPN and PNP transistors in a single SOT-363 package. Key electrical parameters include a collector-emitter voltage (VCE) of 65V, a continuous collector current (IC) of 100mA, and a maximum power dissipation of 225mW. The transition frequency is rated at 100MHz, with an operating temperature range from -55°C to +150°C.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure that the SOT-363 footprint matches your PCB design constraints before finalizing procurement orders.
Select this component when space-constrained designs require matched NPN/PNP pairs. The 65V rating suits general-purpose applications, while the 100mA current limit defines its suitability for low-power signal handling rather than high-current driving tasks.
This part belongs to the BC846 series of dual transistors, designed for surface-mount technology. It serves as a compact alternative to discrete transistor pairs, offering improved board density and consistent electrical characteristics between the NPN and PNP elements within the same package.
BC846BPN_R2_00001
The maximum power dissipation is 225mW.
Yes, it is a dual complementary transistor containing one NPN and one PNP junction in a single package.