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The onsemi BC846B is a single NPN general-purpose bipolar junction transistor housed in the SOT-23 surface-mount package. It features a collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a maximum continuous DC collector current of 100 mA with a power dissipation rating of 225 mW. It offers a DC current gain (hFE) range of 200 to 450 at IC = 2 mA and VCE = 5 V. The transition frequency (fT) is specified at 100 MHz, and it operates within a temperature range of -55°C to +150°C.
Verify the manufacturer marking and date code against official onsemi documentation to ensure authenticity. Confirm that the specific suffix matches the requested electrical binning and packaging format. Check for RoHS compliance status as defined in the latest datasheet revision. Ensure storage conditions adhere to moisture sensitivity levels specified by the manufacturer.
Select this component when a standard NPN transistor with 65 V breakdown voltage is required in a compact SOT-23 footprint. Compare hFE bins if precise gain control is necessary for the application. Consider thermal management requirements given the 225 mW power dissipation limit in small packages. Verify compatibility with existing PCB footprints designed for TO-236AB dimensions.
This part belongs to the BC846 series of NPN transistors, which are widely used in consumer electronics and industrial controls. The BC846B variant specifically denotes a particular DC current gain grouping within the family. It serves as a complement to PNP devices like the BC856B. The SOT-23 package allows for automated assembly and high-density board layouts.
Cross-reference with other manufacturers' BC846B parts such as Nexperia or Diotec for pin-compatible alternatives. Verify that substitute components meet the same 65 V VCEO and 100 mA IC specifications. Ensure the replacement maintains identical hFE ranges and thermal characteristics.