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The BC846BLT3G is a general-purpose NPN silicon transistor from the BC846ALT1G series, manufactured by onsemi. It features a collector-emitter voltage of 65 Vdc and a continuous collector current of 100 mAdc. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 225 mW on an FR-5 board. Packaged in a lead-free SOT-23 (CASE 318) housing with Style 6 pin configuration, it offers a minimum DC current gain of 200 at IC = 10 mA and VCE = 5.0 V.
Verify that the ordering suffix 'T3G' corresponds to the specific tape and reel packaging quantity of 10,000 units as documented in the official datasheet. Confirm the device marking code '1B' matches the intended part variant. Ensure compliance with Pb-Free and Halogen Free requirements if specified for the target application environment.
Select this component when a high-gain NPN transistor with a 65 V collector-emitter breakdown voltage is required. The BC846BL variant provides a minimum hFE of 200, distinguishing it from lower gain options. Consider the SOT-23 package dimensions and thermal resistance characteristics for PCB layout constraints.
This device belongs to the BC846ALT1G series of general-purpose transistors. It shares the same physical package and basic electrical limits as other variants in the family but is distinguished by its specific DC current gain binning. The 'BL' designation indicates the particular gain grouping within the broader product line.
BC846BLT1G
The device uses SOT-23 Style 6 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
Yes, devices with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable. Standard versions may not carry this specific qualification unless explicitly stated.
The total device dissipation is rated at 225 mW when mounted on an FR-5 board at 25°C ambient temperature.