BC846BM3T5H

Overview

The BC846BM3T5H is a single NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23 (SC-70) surface-mount package with three terminals. The device supports a maximum DC collector current of 100 mA and offers a collector-emitter voltage rating of 45 V, with a collector-base voltage of 65 V and an emitter-base voltage of 6 V. Key electrical parameters include a minimum DC current gain (hFE) of 200, a transition frequency (fT) of 100 MHz, and a power dissipation capability of 260 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Single NPN configuration for general-purpose switching and amplification applications
• High DC current gain ensuring effective signal control with low base drive requirements
• Compact SOT-23 surface-mount footprint suitable for space-constrained PCB designs

Applications

• General-purpose switching circuits
• Amplifier stages in consumer electronics
• Signal processing in portable devices

Procurement Notes

Verify the specific suffix 'BM3T5H' against the manufacturer's official documentation to confirm pinout orientation and binning specifications. Ensure that the ordering information matches the exact part number required for your design, as variations in suffixes may indicate different packaging or testing criteria. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards.

Selection Notes

Select this component when a compact NPN transistor with moderate voltage ratings and high current gain is required. The 45 V collector-emitter voltage makes it suitable for low-voltage logic interfaces. Consider the 260 mW power dissipation limit for thermal management in dense layouts. Compare against similar series members like the BC846BL if higher gain bins are needed, noting that the BM variant specifies a minimum hFE of 200.

Part Context

This component belongs to the BC846 family of small-signal NPN transistors from onsemi. It shares functional similarities with other variants such as the BC846BL and BC846BDW1T1G, differing primarily in package type and gain binning. While the BDW1T1G uses a 6-pin SC-88 package for dual configurations, the BM3T5H provides a single transistor solution in a standard 3-pin SOT-23 case, offering flexibility for individual circuit paths.

Replacement Considerations

Direct substitutes include the BC846BLT1G and BC846BWT1G, which share the same SOT-23 package and similar electrical characteristics. Verify that the replacement part meets the 45 V VCEO requirement and maintains the necessary hFE performance for the specific application.