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The onsemi BC846BPDW1T1G is a dual general-purpose NPN/PNP bipolar junction transistor array housed in a SOT-363 (SC-88) surface-mount package. It features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 65 V for the NPN section, with a collector-base voltage (VCBO) of 80 V. The device has a minimum DC current gain (hFE) of 200 and a transition frequency (fT) of 100 MHz. Power dissipation is rated at 380 mW, operating within a temperature range of -55°C to +150°C.
Verify the specific suffix designation when ordering, as prefixes such as 'S' indicate automotive-grade variants meeting AEC-Q101 standards and PPAP requirements. Confirm that the received components match the exact part number to ensure compliance with lead-free and halogen-free material specifications required for regulated assemblies.
Select this component for designs requiring complementary NPN/PNP switching or amplification in space-constrained PCB layouts. The SOT-363 package offers a small form factor suitable for portable electronics. Ensure the 65 V collector-emitter rating and 100 mA current limit align with the circuit's operational demands and thermal management capabilities.
This device belongs to the BC846B series of dual transistors from onsemi. It serves as a compact solution for replacing discrete single transistors in signal processing tasks. The family includes variations like BC847 and BC848, differentiated primarily by their voltage ratings and gain characteristics while maintaining similar packaging and pinout configurations.
Direct substitutes include BC846BPDW1T1G equivalents from other manufacturers offering identical SOT-363 pinouts and electrical parameters. Verify that alternative sources provide AEC-Q101 certification if automotive application compliance is mandatory.