SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC846BS,135 is a dual NPN bipolar junction transistor (BJT) manufactured by Nexperia. It is housed in a TSSOP-6 (SOT-363/SC-88) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 65 V and a maximum collector-base voltage (VCBO) of 80 V. The device supports a continuous collector current of 100 mA with a power dissipation of 200 mW. It features a minimum DC current gain (hFE) of 200 and a transition frequency (fT) of 100 MHz. The saturation voltage is specified at 200 mV, and the operating temperature range spans from -55°C to +150°C.
Verify the specific suffix '135' against official Nexperia documentation to confirm reel packaging quantities and tape specifications. Ensure the component meets AEC-Q101 requirements if used in automotive designs. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Select this component when space-constrained dual NPN solutions are required in SOT-363 packages. Consider its matched electrical characteristics for differential or current mirror topologies. Verify that the 200 mW power dissipation limit aligns with thermal management capabilities in the target application environment.
This part belongs to the BC846 series of general-purpose NPN transistors. While standard single transistors like the BC846B use SOT-23 packaging, the BS variant integrates two devices into the compact SOT-363 form factor. This integration reduces board space and simplifies assembly compared to using discrete components.
Official drop-in replacements within the same family include the BC846BS,115. Designers should verify that alternative suffixes match the required packaging format and gain binning specifications before substitution.