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The BC846BT116 is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes an SOT-23 (TO-236AB) surface-mount package with three terminals. Key electrical specifications include a collector-emitter voltage of 65 V, a collector-base voltage of 80 V, and an emitter-base voltage of 6 V. The device supports a continuous collector current of 120 mA and features a DC current gain (hFE) ranging from 200 to 450 at 2 mA and 5 V. Power dissipation is rated at 350 mW, with a transition frequency of 300 MHz. It operates within a temperature range up to +150°C and holds AEC-Q101 qualification.
Verify the specific suffix 'T116' against official ROHM documentation to confirm reel packaging details and exact binning grades. Ensure compatibility with standard SOT-23 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before final procurement integration.
Select this component when a single NPN transistor with high current gain (B grade) and automotive qualification is required. The 65V rating suits low-voltage signal applications. Compare power dissipation limits against thermal constraints. Consider the 300MHz transition frequency for bandwidth requirements relative to alternative small-signal transistors.
This part belongs to the BC846 series of general-purpose NPN transistors. It complements the PNP BC857B counterpart. The T116 suffix typically denotes tape-and-reel packaging for automated assembly. It serves as a standard discrete semiconductor solution for amplification and switching tasks in compact electronic designs.
BC846BHZG is a verified equivalent part number from ROHM Semiconductor offering identical electrical characteristics and automotive qualification.