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The BC846BW is a general-purpose NPN bipolar junction transistor manufactured by Nexperia. It is housed in the SOT323 (SC-70) surface-mount plastic package. The device features a collector-emitter breakdown voltage of 65 V and a maximum continuous collector current of 100 mA. It offers a DC current gain (hFE) minimum of 200 at 2 mA and 5 V. The transition frequency is specified at 100 MHz, with a maximum power dissipation of 200 mW. Operating junction temperature ranges from -55°C to 150°C.
Verify the specific suffix against official Nexperia documentation to confirm exact binning or packaging variations. Ensure the ordering code matches the required gain selection group. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Cross-reference the component marking code with the datasheet to prevent counterfeit substitution during assembly.
Select this component for applications requiring low-voltage NPN switching within the SC-70 footprint. The 65 V rating suits standard logic-level interfaces. Verify that the 100 mA current limit meets load requirements. Consider the thermal dissipation limits in high-density PCB layouts. Compare gain bins if precise hFE consistency is critical for the amplifier stage design.
This part belongs to the BC846W series of NPN general-purpose transistors. It serves as the NPN counterpart to the BC856W PNP device. The series is designed for cost-effective mass production in consumer electronics. The SOT323 package allows for automated pick-and-place manufacturing processes.
BC846AW
The complementary PNP transistor is the BC856BW.
No, partial power-down specifications using I_OFF circuitry are not documented for this BJT family.