SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC846BWE6327HTSA1 is a single NPN bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage of 65 V, while the collector-base voltage reaches 80 V. Power dissipation is rated at 330 mW, and the gain-bandwidth product is 250 MHz. It functions within a temperature range of -65 °C to +150 °C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific suffix matches the required electrical characteristics and packaging format. Ensure compliance with RoHS directives and automotive standards if applicable to the target design environment.
Select this component when a single NPN BJT with high gain and automotive reliability is required. Compare against other BC846 variants based on specific gain binning requirements and thermal management needs within the SOT-23-3 footprint constraints.
This part belongs to the BC846 series of small-signal NPN transistors. It represents a single-transistor variant within a family that also includes dual configurations like the BC846S. The series is widely used in consumer and industrial applications requiring reliable low-power switching.
BC846BE6327HTSA1
Yes, it is qualified according to AEC-Q101 standards.
The maximum collector-emitter voltage (VCEO) is 65 V.