BC846BWE6327HTSA1

BC846BWE6327HTSA1

  • Description:TRANS NPN 65V 0.1A PG-SOT323
  • Series:-

SKU:4da60c4930ac Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 65V 0.1A PG-SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

Download product information

BC846BWE6327HTSA1

Overview

The BC846BWE6327HTSA1 is a single NPN bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage of 65 V, while the collector-base voltage reaches 80 V. Power dissipation is rated at 330 mW, and the gain-bandwidth product is 250 MHz. It functions within a temperature range of -65 °C to +150 °C.

Feature Summary

  • Single NPN configuration for discrete switching and amplification
  • High DC current gain suitable for signal processing
  • Low saturation voltage for efficient power handling
  • Automotive qualification compliant

Applications

  • General-purpose switching circuits
  • Amplifier stages
  • Automotive electronics systems

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific suffix matches the required electrical characteristics and packaging format. Ensure compliance with RoHS directives and automotive standards if applicable to the target design environment.

Selection Notes

Select this component when a single NPN BJT with high gain and automotive reliability is required. Compare against other BC846 variants based on specific gain binning requirements and thermal management needs within the SOT-23-3 footprint constraints.

Part Context

This part belongs to the BC846 series of small-signal NPN transistors. It represents a single-transistor variant within a family that also includes dual configurations like the BC846S. The series is widely used in consumer and industrial applications requiring reliable low-power switching.

Replacement Considerations

BC846BE6327HTSA1

FAQ

Is the BC846BWE6327HTSA1 qualified for automotive applications?

Yes, it is qualified according to AEC-Q101 standards.

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) is 65 V.

BC846BWE6327HTSA1BC846BWE6327HTSA1

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